METHOD AND SYSTEM FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED : To provide a method capable of forming a good insulating film in all directions. SOLUTION : In the semiconductor device, an SiC substrate is employed and an insulating film is formed by plasma treatment. The insulating film contains rare gas. Preferably, the rare gas contains at least one of krypton (Kr), argon (Ar) and xenon (Xe). A combination of oxygen gas and krypton (Kr) is preferably employed.