SEMICONDUCTOR LASER DEVICE FOR ELECTRO-OPTIC APPLICATIONS AND METHOD FOR MANUFACTURING SAID DEVICE

The invention relates to a semiconductor device for electro-optic applications of the type including at least a rare-earth ions doped P/N junction integrated on a semiconductor substrate. This device may be used to obtain laser action in Silicon and comprises a cavity or a waveguide and a coherent light source obtained incorporating the rare-earth ions, and specifically Erbium ions, in the depletion layer of said P/N junction. The junction may be for instance the base-collector region of a bipolar transistor and is reverse biased.