The preset invention relates to dielectric material, and device, and memory device comprising the same. According to an aspect, provided is a dielectric material having a composition represented by Formula 1 : (100-x-y)BaTiO3.xBiREO3.yABO3. wherein, in Formula 1, RE is a rare earth metal, A is an alkali metal, B is a pentavalent transition metal, and 0
