GROUP 3 METAL PRECUSOR COMPOUND AND PREPARING METHOD OF THIN FILM CONTAINING METAL USING THE SAME

The present invention provides a structure in which n cyclopentadienyl (Cp) ligand and m linear amine ligand (1≤n≤2, 1≤ m≤2, n + m = 3) are coordinated to the central metal, wherein the central metal is a rare earth element or ruthenium (Lu) Group 3 metal precursor compound and a metal-containing thin film using the same It has the effect.