RARE EARTH PRECURSORS, PREPARATION METHOD THEREOF AND PROCESS FOR THE FORMATION OF THIN FILMS USING

The present invention relates to compounds that can be deposited by thin film through vapor deposition, and specifically, rare earth compounds that are applicable to atomic layer deposition (ALD) or Chemical vapor deposition (CVD) and have excellent thermal stability and reactivity, rare earth precursors comprising the same, methods for producing thereof and methods for forming thin films using the same.