METHOD FOR MANUFACTURING METAL OXIDE FILM FOR GATE PART OF FIELD EFFECT TRANSISTOR AND FIELD EFFECT

PROBLEM TO BE SOLVED : To provide a method for manufacturing a thin fil which is not corrosive and has a dielectric constant and insulation performance suitable as the gate part of an FET (field effect transistor). SOLUTION : With rare earth or aluminum β-diketonate metal complex as raw material, a thermal decomposition chemical gas phase precipitation equipment 1 forms a metal oxide film for the gate part of the FET on a substrate by a thermal decomposition chemical gas phase precipitation method.