METHOD FOR MANUFACTURING AMORPHOUS SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING THIN FILM TRANSIS

PROBLEM TO BE SOLVED : To provide a method for manufacturing an amorphous semiconductor film containing sufficient rare gas in the film without bringing about peeling at a gettering side by a simple management of an apparatus, and to provide a method for manufacturing a thin film transistor using the same. SOLUTION : The method for manufacturing the amorphous semiconductor film includes the steps of forming a first amorphous semiconductor film in the chamber by using a silicide gas, conveying the substrate into the chamber, sputtering the first amorphous semiconductor film by using a rare gas, and forming second amorphous semiconductor film on the substrate. In this method, the second amorphous semiconductor film is formed to contain the rare gas of the concentration of 5×1018 to 5×1021 atoms/cm3.